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H5N1506P
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0389-0200 Rev.2.00 Jul 03, 2006
Features
* Low on-resistance * Low leakage current * High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
D
G
1. Gate 2. Drain (Flange) 3. Source
1
2
3
S
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. STch = 25C, Tch 150C Symbol VDSS VGSS ID ID (pulse) IDR Note1 IDR (pulse) Note3 IAP EARNote3 Pch Note2 ch-c Tch Tstg
Note1
Ratings 150 30 98 294 98 294 48 172 150 0.833 150 -55 to +150
Unit V V A A A A A mJ W C/W C C
Rev.2.00 Jul 03, 2006 page 1 of 6
H5N1506P
Electrical Characteristics
(Ta = 25C)
Item Drain to Source breakdown voltage Zero Gate voltage Drain current Gate to Source leak current Gate to Source cutoff voltage Forward transfer admittance Static Drain to Source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate charge Gate to Source charge Gate to Drain charge Body-Drain diode forward voltage Body-Drain diode reverse recovery time Body-Drain diode reverse recovery charge Notes: 4. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Qrr Min 150 -- -- 3.0 36 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 60 0.014 4900 1000 120 60 380 220 250 100 24 45 1.0 150 1.0 Max -- 1 0.1 4.5 -- 0.016 -- -- -- -- -- -- -- -- -- -- 1.5 -- -- Unit V A A V S pF pF pF ns ns ns ns nC nC nC V ns C Test conditions ID = 10 mA, VGS = 0 VDS = 150 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 47.5 A, VDS = 10 V Note4 ID = 47.5 A, VGS = 10 VNote4 VDS = 25 V VGS = 0 f = 1 MHz ID = 47.5 A VGS = 10 V RL = 1.58 Rg = 10 VDD = 120 V VGS = 10 V ID = 95 A IF = 95 A, VGS = 0 Note4 IF = 95 A, VGS = 0 diF/dt = 100 A/s
Rev.2.00 Jul 03, 2006 page 2 of 6
H5N1506P
Main Characteristics
Power vs. Temperature Derating
200 1000 300 150
10 10 0 s 1 m s s
Maximum Safe Operation Area
Ta = 25C
Channel Dissipation Pch (W)
Drain Current ID (A)
100 30 10 3 1 0.3
100
PW = 10 ms (1shot) DC Operation (Tc = 25C) area is limited by
50
0.1 Operation in this 0.03 RDS(on) 0.01 1 3
0
50
100
150
200
10
30
100
300
1000
Case Temperature Tc (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
100 10 V Pulse Test 100
Typical Transfer Characteristics
VDS = 10 V Pulse Test
Drain Current ID (A)
6V 60
Drain Current ID (A)
80
7V
6.5 V
80
60
40
5.5 V
40
20
VGS = 5 V
20
Tc = 75C 2 4
0
4
8
12
16
20
0
25C -25C 6
8
10
Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source on State Resistance RDS(on) () Drain to Source Saturation Voltage VDS(on) (V)
4 Pulse Test 3
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current 0.1 0.05 0.02 0.01 0.005 0.002 0.001 1 3 10 30
Pulse Test VGS = 10 V
2 ID = 95 A 1 47.5 A 20 A 0 4 8 12 16 20
100 300 1000
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.2.00 Jul 03, 2006 page 3 of 6
H5N1506P
Static Drain to Source on State Resistance vs. Temperature
Forward Transfer Admittance |yfs| (S)
0.05 VGS = 10 V 1000 300 100 30 25C 10 3 1 1 75C VDS = 10 V Pulse Test 3 10 30 100 300 1000 Tc = -25C Pulse Test
Static Drain to Source on State Resistance RDS(on) ()
Forward Transfer Admittance vs. Drain Current
0.04 47.5 A 0.03 ID = 95 A
0.02
20 A
0.01 0 -25
0
25
50
75
100 125 150
Case Temperature Tc (C)
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
100000 30000 VGS = 0 f = 1 MHz
Body-Drain Diode Reverse Recovery Time
Reverse Recovery Time trr (ns)
1000 500 200 100 50 20 10 5 2 1 1 3 10 30 100 300 1000 0 di / dt = 100 A / s VGS = 0, Ta = 25C
Capacitance C (pF)
10000 3000 1000 300 100 Crss 30 50 100 150 Coss Ciss
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Drain to Source Voltage VDS (V)
ID = 95 A VDD = 120 V 60 V 30 V VDS
Switching Characteristics
Gate to Source Voltage VGS (V)
16 10000 VGS = 10 V, VDD = 75 V PW = 5 s, duty 1 % RG = 10 tf td(off) tr tf
240
180
VGS
12
Switching Time t (ns)
1000
120
8
100 tr 10 0.1
td(on)
60
VDD = 120 V 60 V 30 V 40 80 120 160
4
0 0 200
0.3
1
3
10
30
100
Gate Charge Qg (nC)
Drain Current ID (A)
Rev.2.00 Jul 03, 2006 page 4 of 6
H5N1506P
Reverse Drain Current vs. Source to Drain Voltage
100
Gate to Source Cutoff Voltage VGS(off) (V)
Gate to Source Cutoff Voltage vs. Case Temperature
5 VDS = 10 V 4 ID = 10 mA
Reverse Drain Current IDR (A)
80
1 mA
60 10 V 40 5V 20 VGS = 0 V Pulse Test 0 0.4 0.8 1.2 1.6 2.0
3
2 0.1 mA 1 0 -25
0
25
50
75
100 125 150
Source to Drain Voltage VSD (V)
Case Temperature
Tc (C)
Normalized Transient Thermal Impedance s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25C
1
D=1 0.5
0.3
0.2
0.1
0.1
0.05
ch - c(t) = s (t) * ch - c ch - c = 0.833C/W, Tc = 25C
PDM
D=
PW T
0.03 0.02
0.0 1
h 1s ot pu
PW T
lse
0.01 10
100
1m
10 m
100 m
1
10
Pulse Width
PW (s)
Switching Time Test Circuit
Waveform
Vin Monitor D.U.T. RL 10 Vin 10 V
Vout Monitor Vin Vout V DD = 75 V 10% 10%
90%
10%
90%
90% td(off) tf
td(on)
tr
Rev.2.00 Jul 03, 2006 page 5 of 6
H5N1506P
Package Dimensions
Package Name TO-3P JEITA Package Code SC-65 RENESAS Code PRSS0004ZE-A Previous Code TO-3P / TO-3PV MASS[Typ.] 5.0g
5.0 0.3
Unit: mm
1.5
15.6 0.3
4.8 0.2
0.5
1.0
3.2 0.2
14.9 0.2
19.9 0.2
1.6 1.4 Max 2.0 2.8
2.0
1.0 0.2 3.6 0.9 1.0
18.0 0.5
0.6 0.2
5.45 0.5
5.45 0.5
Ordering Information
Part Name H5N1506P-E Quantity 360 pcs Box (Tube) Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Jul 03, 2006 page 6 of 6
0.3
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
http://www.renesas.com
Renesas Technology Malaysia Sdn. Bhd Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510
(c) 2006. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .6.0

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